features v ds (v) = 30v i d =5.8a(v gs =10v) r ds(on) 28m (v gs = 10v) r ds(on) 33m (v gs =4.5v) r ds(on) 52m (v gs =2.5v) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 1. gate 2. source 3. drain KO3400 (ao3400) absolute maximum ratings ta = 25 parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 12 v continuous drain current t a =25 5.8 t a =70 4.9 pulsed drain current * i dm 30 power dissipation t a =25 1.4 t a =70 1 thermal resistance.j unction- to-ambient r thja 85 /w thermal resistance.junction- to-case r thc 43 /w junction and storage temperature range t j ,t stg -55to150 * repetitive rating, pulse width limited by junction temperature. i d p d a w smd type transistors smd type transistors smd type smd type ic smd type product specification 4008-318-123 sales@twtysemi.com 1of 2 http://www.twtysemi.com
smd type smd type electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage v dss i d =250 a, v gs =0v 30 v v ds =24v, v gs =0v 1 v ds =24v, v gs =0v ,t j =55 5 gate-body leakage current i gss v ds =0v, v gs = 12v 100 na gate threshold voltage v gs(th) v ds =v gs i d =250 a 0.7 1.1 1.4 v v gs =10v, i d =5.8a 22.8 28 v gs =10v, i d =5.8a t j =125 32 39 v gs =4.5v, i d =5a 27.3 33 m v gs =2.5v, i d =4a 43.3 52 m on state drain current i d(on) v gs =4.5v, v ds =5v 30 a forward transconductance g fs v ds =5v, i d =5a 10 15 s input capacitance c iss 823 1050 pf output capacitance c oss 99 pf reverse transfer capacitance c rss 77 pf gate resistance r g v gs =0v, v ds =0v, f=1mhz 1.4 2 total gate charge q g 9.7 12 nc gate source charge q gs 1.6 nc gate drain charge q gd 3.1 nc turn-on delaytime t d(on) 3.3 5 ns turn-onrisetime t r 4.8 7 ns turn-off delaytime t d(off) 26.3 40 ns turn-off fall time t f 4.1 6 ns body diode reverse recovery time t rr i f =5a, d i /d t =100a/ s 16 20 ns body diode reverse recovery charge q rr i f =5a, d i /d t =100a/ s 8.9 12 nc maximum body-diode continuous current i s 2.5 a pulsed body-diode current * i sm 30 a diode forward voltage v sd i s =1a,v gs =0v 0.71 1 v * repetitive rating, pulse width limited by junction temperature. v gs =10v, v ds =15v, r l =2.7 ,r gen =3 r ds(on) static drain-source on-resistance i dss zero gate voltage drain current a m v gs =0v, v ds =15v, f=1mhz v gs =4.5v, v ds =15v, i d =5.8a KO3400 (ao3400) smd type transistors smd type transistors smd type smd type ic smd type product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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